Level Set Approach to Anisotropic Wet Etching of Silicon
نویسندگان
چکیده
منابع مشابه
Level Set Approach to Anisotropic Wet Etching of Silicon
In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates alon...
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– We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale: the weakening of backbonds following OH termination of surface sites and the existence of significant interaction between the surface-termina...
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Optical MEMS found various applications over the last years due to the rapidly increasing data rates in optical networks. As standard single-mode fibers are used, the required alignment tolerances are below 1 μm for optical fiber. The assembly and reliability of MOEMS devices requires increasing attention. Additionally, the trend is going from single-functionality devices to more complex subsys...
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In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 〈110〉 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after ...
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ژورنال
عنوان ژورنال: Sensors
سال: 2010
ISSN: 1424-8220
DOI: 10.3390/s100504950